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| MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE A B H J F K Q - THD (2 TYP.) C D J R - THD (2 TYP.) M L P - DIA. (4 TYP.) E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies N E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.21 3.6610.01 2.44 1.890.01 Millimeters 107.0 93.00.25 62.0 48.00.25 Dimensions J K L M N P Q R Inches 0.79 0.69 0.63 0.35 0.28 0.26 Dia. M6 Metric M4 Metric Millimeters 20.0 17.5 16.0 9.0 7.0 Dia. 6.5 M6 M4 1.42+0.04/-0.02 36.0+1.0/-0.5 1.14 29.0 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-28H is a 1400V (VCES), 400 Ampere Single IGBT Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 28 1.02+0.04/-0.2 25.8+1.0/-0.5 0.94 24.0 Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC =25C) Peak Collector Current (Tj 150C) Emitter Current** (TC =25C) Peak Emitter Current** Maximum Collector Dissipation (TC =25C) Mounting Torque, M6 Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM400HA-28H -40 to 150 -40 to 125 1400 20 400 800* 400 800* 2800 1.96 ~ 2.94 1.96 ~ 2.94 0.98 ~ 1.47 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrms Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 2040 - Max. 2.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = -800A/s IE = 400A, diE/dt = -800A/s VCC = 800V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 4.0 Max. 80 28 16 300 500 350 500 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.045 0.09 0.040 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 640 15 Tj = 25oC VGE = 20V 13 12 640 4 11 480 480 3 320 10 320 2 160 7 9 8 160 0 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 160 320 480 640 800 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C IC = 800A IC = 400A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Cies 8 101 Coes 6 102 4 Cres 100 2 IC = 160A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf t d(off) SWITCHING TIME, (ns) REVERSE RECOVERY TIME, t rr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A Irr 16 t d(on) VCC = 600V VCC = 800V t rr 12 102 tr 102 101 8 VCC = 800V VGE = 15V RG = 0.78 Tj = 125C di/dt = -800A/sec Tj = 25C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 800 1600 2400 3200 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.045C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.09C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM400HA-28H
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